Indirect optical absorption of single crystalline β-FeSi2
Indirect optical absorption of single crystalline β-FeSi2
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DOI：
10.1063/1.1790590
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发表时间：
2004-05
影响因子：
4
通讯作者：
H. Udono;I. Kikuma;T. Okuno;Y. Masumoto;H. Tajima
中科院分区：
文献类型：
--
作者：
H. Udono;I. Kikuma;T. Okuno;Y. Masumoto;H. Tajima
通过透射率测量，研究了β-FeSi2单晶在基吸收边缘附近的吸收光谱。在低温吸收光谱中清晰地观察到与发射和吸收组分相对应的声子结构。在间接允许跃迁中假设激子态，我们确定声子能量为0.031±0.004eV。在4K时，激子跃迁能为0.814eV。
We investigated optical absorption spectra near the fundamental absorption edge of β-FeSi2 single crystals by transmission measurements. The phonon structure corresponding to the emission and absorption component was clearly observed in the low-temperature absorption spectra. Assuming exciton state in the indirect allowed transition, we determined a phonon energy of 0.031±0.004eV. A value of 0.814eV was obtained for the exciton transition energy at 4K.