Contact resistivity and current flow path at metal/graphene contact
Contact resistivity and current flow path at metal/graphene contact
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DOI：
10.1063/1.3491804
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发表时间：
2010-10-04
影响因子：
4
通讯作者：
Toriumi, A.
中科院分区：
文献类型：
--
作者：
Nagashio, K.;Nishimura, T.;Toriumi, A.
检查了金属和石墨烯之间的接触性能。对具有不同接触面积的多探针装置的电学测量表明，电流优先进入接触金属边缘的石墨烯。使用跨桥开尔文（CBK）结构的分析表明，当接触长度短于传输长度（大约1μm）时，会发生从边缘传导到区域传导的转变。使用 CBK 测量 Ni 的接触电阻率类似于 5 x 10(-6) Omega cm(2)。简单的计算表明，小型化石墨烯场效应晶体管需要小于10(-9) Omega cm(2) 的接触电阻率。 (C) 2010 年美国物理研究所。 [doi:10.1063/1.3491804]
The contact properties between metal and graphene were examined. The electrical measurement on a multiprobe device with different contact areas revealed that the current flow preferentially entered graphene at the edge of the contact metal. The analysis using the cross-bridge Kelvin (CBK) structure suggested that a transition from the edge conduction to area conduction occurred for a contact length shorter than the transfer length of similar to 1 mu m. The contact resistivity for Ni was measured as similar to 5 x 10(-6) Omega cm(2) using the CBK. A simple calculation suggests that a contact resistivity less than 10(-9) Omega cm(2) is required for miniaturized graphene field effect transistors. (C) 2010 American Institute of Physics. [doi:10.1063/1.3491804]