Field distribution in a quantum Hall device
Field distribution in a quantum Hall device
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量子霍尔器件中的场分布
DOI：
10.1088/0022-3719/18/33/011
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发表时间：
1985
期刊：
影响因子：
--
通讯作者：
D. Thouless
中科院分区：
文献类型：
--
作者：
D. Thouless
计算了载有量子化霍尔电流的长矩形器件中的电场强度。在理想系统中，得到了边缘附近场的解析近似，与MacDonald等（1983）的数值结果一致。它指出，即使是一个小的偏离霍尔角从π/2导致一个均匀的场，因此电流，整个系统。抗磁修正被证明是可以忽略不计的。在源极和漏极中的场被计算，对于二维电极，其解析解是可用的，并且对于三维电极。在三维的情况下，大部分的能量耗散发生在距离l的两个角的矩形，其中l的表达式推导。
The electric field strengths in a long rectangular device carrying a quantised Hall current are calculated. In the ideal system an analytic approximation for the field near the edge is obtained which is in agreement with the numerical results of MacDonald et al. (1983). It is pointed out that even a small departure of the Hall angle from pi /2 leads to a uniform field, and therefore current, across the system. Diamagnetic corrections are shown to be negligible. The fields in the source and drain are calculated, both for a two-dimensional electrode, for which an analytic solution is available, and for a three-dimensional electrode. In the three-dimensional case, most of the energy dissipation occurs within a distance l of two of the corners of the rectangle, where an expression for l is derived.