Stack of two III-nitride laser diodes interconnected by a tunnel junction.
Stack of two III-nitride laser diodes interconnected by a tunnel junction.
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通过隧道结互连的两个 III 族氮化物激光二极管的堆叠。
DOI：
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发表时间：
2019
期刊：
影响因子：
3.8
通讯作者：
C. Skierbiszewski
中科院分区：
文献类型：
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作者：
M. Siekacz;G. Muzioł;M. Hajdel;M. Żak;K. Nowakowski;H. Turski;M. Sawicka;P. Wolny;A. Feduniewicz;S. Stanczyk;J. Moneta;C. Skierbiszewski
我们展示了一个堆栈的两个III族氮化物激光二极管（LD）互连的隧道结生长的等离子体辅助分子束外延。无氢生长用于获得掩埋隧道结（TJ）所必需的生长态p型导电性。我们展示了隧道结设计的影响。特别是，我们表明，除了有益的压电极化内TJ，重掺杂降低了微分电阻率甚至进一步。该器件以0.7 W/A的斜率效率（SE）在459 nm的波长下开始激光发射，随后从第二有源区以456 nm的波长发射激光，使总SE加倍至1.4 W/A。该演示为紫外和可见光高功率脉冲III族氮化物LD的叠层制造开辟了新的可能性。
We demonstrate a stack of two III-nitride laser diodes (LDs) interconnected by a tunnel junction grown by plasma-assisted molecular beam epitaxy. Hydrogen-free growth is used to obtain as-grown p-type conductivity essential for buried tunnel junctions (TJ). We show the impact of the design of tunnel junction. In particular, we show that, apart from the beneficial piezoelectric polarization inside the TJ, heavy doping reduces the differential resistivity even further. The device starts to lase at a wavelength of 459 nm with a slope efficiency (SE) of 0.7 W/A followed by lasing at 456 nm from the second active region doubling the total SE to 1.4 W/A. This demonstration opens new possibilities for the fabrication of stacks of ultraviolet and visible high power pulsed III-nitride LD.