Soft-solution process of Fe–Tb–O films for use in high frequency micromagnetic devices
Soft-solution process of Fe–Tb–O films for use in high frequency micromagnetic devices
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用于高频微磁器件的 Fe-Tb-O 薄膜的软溶液工艺
DOI：
10.1063/1.369064
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发表时间：
1999
影响因子：
3.2
通讯作者：
T. Fujii
中科院分区：
文献类型：
--
作者：
P. Lim;Koji Yamada;M. Inoue;K. Arai;M. Izaki;T. Fujii
尝试使用软溶液工艺和替代电流沉积来制造具有异质颗粒结构的 Fe-Tb-O 薄膜。发现所得薄膜成分对络合剂 KNaC4H4O6 的浓度、沉积电流的强度 i 和频率 f 敏感。这些依赖性可以从成膜模型中得到很好的解释。当KNaC4H4O6=283.47 mM、i=6.7 mA/cm2、f=6 mHz时，Tb含量极高的薄膜超过29 at。 获得了％，表现出Hc=29 Oe和Mr/Ms=0.93的相对软磁磁化强度。
An attempt for fabricating Fe–Tb–O films with heterogranular structures was made using a soft-solution process with an alternative current for deposition. The resultant film composition was found to be sensitive to the concentration of complex agent, KNaC4H4O6, the intensity i, and the frequency f of deposition current. These dependencies are well explained from the model for film formation. When KNaC4H4O6=283.47 mM, i=6.7 mA/cm2, and f=6 mHz, the film with very high Tb content exceeding 29 at. % were obtained, which exhibited a relatively soft magnetic magnetization of Hc=29 Oe and Mr/Ms=0.93.