Lumped device modeling with FDTD including packaging effects
Lumped device modeling with FDTD including packaging effects
复制标题
使用 FDTD 进行集总器件建模，包括封装效应
DOI：
10.1109/mwsym.2002.1011849
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
C. Railton
中科院分区：
文献类型：
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作者：
B. P. Koh;I. Craddock;P. Urwin;C. Railton
使用集总单元时域有限差分（LE-FDTD）公式可以将双端器件纳入到时域有限差分中，但不幸的是，这种方法无法准确分析器件的封装效应。这可以使用集总网络FDTD（LN-FDTD）-但是LN-FDTD需要对简单器件（如肖特基或变容二极管）进行复杂的预先计算。因此，本文提出了一种简单有效的状态空间方法，将器件封装效应引入到FDTD算法中。通过变容二极管调谐贴片天线的实验测量，新技术得到了验证，预测和实际响应之间的协议被证明是优秀的。
A two-terminal device can be incorporated into FDTD using the Lumped Element FDTD (LE-FDTD) formulation, unfortunately, this method is not able to analyze accurately the packaging effects of the device. This is possible using Lumped Network FDTD (LN-FDTD) - however LN-FDTD requires a complicated pre-calculation for simple devices such as Schottky or varactor diode. Therefore, this paper presents a simple and effective state space approach to incorporate device packaging effects into FDTD algorithm. The new technique is validated by means of experimental measurements of a varactor-tuned patch antenna and the agreement between the predicted and actual responses is shown to be excellent.