Oxidation of Porous Silicon and Properties of Its Oxide Film
Oxidation of Porous Silicon and Properties of Its Oxide Film
复制标题
多孔硅的氧化及其氧化膜的性能
DOI：
10.1143/jjap.19.231
复制
发表时间：
1980
影响因子：
1.5
通讯作者：
T. Unagami
中科院分区：
文献类型：
--
作者：
T. Unagami
通过研究多孔硅层的氧化过程、氧化温度和红外吸收光谱，研究了多孔硅层的氧化机理。结果表明，PSL的氧化是由PSL表面和孔壁的表面反应控制的。PSL中的氧化进程在接近900°C时发生变化。Si2O3和SiO2是通过低于400°C的低温氧化产生的，物理吸附的水存在于通过低于700°C的温度下的湿O2氧化形成的氧化多孔硅（OPS）膜中。此外，OPS膜的性能报告。氧化温度、氧化气氛和衬底电阻率对OPS膜的刻蚀速率、介电常数、损耗因子和击穿强度有很大的影响。在湿O2中，通过1000°C以上的高温氧化，在短时间内形成厚的OPS膜，其具有与体硅的热SiO2相同的性质。
The mechanism of oxidation of a porous silicon layer (PSL) was studied by examining the oxidation progress, the temperature dependence of the oxidation and the infrared absorption spectra. It is found that the oxidation of PSL is controlled by a surface reaction at both the surface of PSL and the wall of pores in PSL. The progress of the oxidation in PSL is altered at nearly 900°C. Si2O3 as well as SiO2 are produced by low temperature oxidation below 400°C and physically-absorbed water exists in an oxidized porous silicon (OPS) film formed by wet O2 oxidation at temperatures below 700°C. Further, the properties of the OPS film are reported. Etching rate, dielectric constant, tan δ and breakdown strength of the OPS film are strongly dependent on the oxidation temperature, oxidation atmosphere and substrate resistivity. Thick OPS film, which has the same properties as thermal SiO2 of bulk silicon, is formed in a short time by high temperature oxidation above 1000°C in wet O2.