Optimization of Au-Free Ohmic Contact Based on the Gate-First Double-Metal AlGaN/GaN MIS-HEMTs and SBDs Process
Optimization of Au-Free Ohmic Contact Based on the Gate-First Double-Metal AlGaN/GaN MIS-HEMTs and SBDs Process
复制标题
基于先栅双金属 AlGaN/GaN MIS-HEMT 和 SBD 工艺的无金欧姆接触优化
DOI：
10.1109/ted.2017.2778072
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发表时间：
2018
影响因子：
3.1
通讯作者：
Chen Dongmin
中科院分区：
文献类型：
--
作者：
Sun Hui;Liu Meihua;Liu Peng;Lin Xinnan;Chen Jianguo;Wang Maojun;Chen Dongmin
无Au的兼容性用于AlGaN/GaN金属-绝缘体-半导体高电子迁移率晶体管的栅极优先双金属（GFDM）工艺中的（Ti/Al/Ti/TiN）欧姆接触首次研究和讨论了MIS-HEMT和肖特基势垒二极管（SBD）在同一片150 mm晶片上的组装工艺，包括接触预处理、介质层中的Al扩散、以及通孔（两个金属层之间的接触窗口）蚀刻条件。所有这些步骤对于欧姆接触以及整个AlGaN/GaN器件制造工艺至关重要。采用优化的欧姆接触工艺，不仅获得了极低的欧姆接触电阻（<inline-formula><tex-math notation="LaTeX">${R}_{C}$</tex-math></inline-formula>）值（<inline-formula><tex-math notation="LaTeX">1.07 Omega \cdot \text {mm}$），</tex-math></inline-formula>而且在150 mm晶片上获得了良好的均匀性。并对基于该工艺的MIS-HEMT和SBD器件的性能和均匀性进行了讨论。
The compatibility of Au-free (Ti/Al/Ti/TiN) ohmic contacts in the gate-first double-metal (GFDM) process for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) and Schottky barrier diodes (SBDs) on the same 150-mm wafer was investigated and discussed for the first time, including contact pretreatments, Al diffusion in dielectric layers, and vias (contact windows between two metal layers) etching conditions. All of these steps are crucial to ohmic contacts as well as overall AlGaN/GaN device fabrication process. With the optimized ohmic contacts steps, not only an extremely low ohmic contact resistance (<inline-formula> <tex-math notation="LaTeX">${R}_{C}$ </tex-math></inline-formula>) value of <inline-formula> <tex-math notation="LaTeX">$1.07~\Omega \cdot \text {mm}$ </tex-math></inline-formula> but also an excellent uniformity on the 150-mm wafer was obtained. The performance and uniformity of the MIS-HEMTs and SBDs based on the optimized GFDM process were also discussed.