Measurements of Torsional Oscillations and Thermal Conductivity in Solid 4He
Measurements of Torsional Oscillations and Thermal Conductivity in Solid 4He
复制标题
固体 4He 中扭转振荡和热导率的测量
DOI:
10.1007/s10909-012-0665-9
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发表时间:
2012
影响因子:
2
通讯作者:
Zmeev D
中科院分区:
文献类型:
--
作者:
Zmeev D
Polycrystalline samples of hcp4He of molar volume 19.5 cm3with small amount of3He impurities were grown in an annular container by the blocked-capillary method. Three concentrations of3He,x3, were studied: isotopically purified4He with the estimatedx3≤10−10, ‘well-grade’ helium withx3∼3×10−7and a specially prepared mixture withx3=2.5×10−6. The torsional oscillator response and thermal conductivity were investigated before and after annealing. The temperature and width of the torsional anomaly increase with increasingx3. Annealing resulted in an increased phonon mean free path but often in little change in the torsional oscillator response. While the magnitude of the torsional anomaly and phonon mean free path can be very different in different samples, no correlation was found between them; this implies that these two properties are controlled by different types of crystal defects. It seems plausible that the mean free path of thermal phonos at ∼200 mK is controlled by vibrating dislocations while the magnitude of the frequency shift of torsional oscillations is governed by static defects such as pinned dislocations and grain boundaries.
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