Nucleation and growth of carbon nanotubes by microwave plasma chemical vapor deposition
Nucleation and growth of carbon nanotubes by microwave plasma chemical vapor deposition
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DOI：
10.1063/1.1319529
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发表时间：
2000-10-23
影响因子：
4
通讯作者：
Jin, SH
中科院分区：
文献类型：
--
作者：
Bower, C;Zhou, O;Jin, SH
研究了微波等离子体增强化学气相沉积定向多壁碳纳米管的成核和生长过程。纳米管从硅衬底表面上的催化钴岛成核和生长，其直径和长度取决于钴岛的大小。电子显微镜显示，纳米管的生长通过“基地生长”机制。纳米管最初以非常快速和恒定的速率（类似于100 nm/s）生长，该速率在催化剂Co颗粒被纳米管完全封装之后急剧降低。我们提出了一个详细的模型来解释这些实验观察的成核和纳米管的生长。(C)2000年美国物理学会。【S0003-6951（00）00443-5】。
The nucleation and growth of aligned multiwall carbon nanotubes by microwave plasma-enhanced chemical vapor deposition have been studied. The nanotubes nucleate and grow from catalytic cobalt islands on a silicon substrate surface, with both their diameter and length dependent on the size of the cobalt islands. Electron microscopy reveals that the nanotubes grow via a "base growth" mechanism. The nanotubes grow initially at a very rapid and constant rate (similar to 100 nm/s) that decreases sharply after the catalyst Co particles become fully encapsulated by the nanotubes. We propose a detailed model to explain these experimental observations on nucleation and growth of nanotubes. (C) 2000 American Institute of Physics. [S0003-6951(00)00443-5].