Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices
Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices
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DOI：
10.1142/5607
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发表时间：
2004-07
期刊：
影响因子：
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通讯作者：
peixiong zhao;D. Fleetwood
中科院分区：
文献类型：
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作者：
peixiong zhao;D. Fleetwood
This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide- semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.
