Field Emission from Polycrystalline GaN Grown on Mo Substrate
Field Emission from Polycrystalline GaN Grown on Mo Substrate
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Mo 衬底上生长的多晶 GaN 的场致发射
DOI：
10.1143/jjap.41.l907
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发表时间：
2002
影响因子：
1.5
通讯作者：
H. Asahi
中科院分区：
文献类型：
--
作者：
H. Tampo;T. Yamanaka;Kohichiro Yamada;Kuniyuki Ohnishi;M. Hashimoto;H. Asahi
采用离子去除电子回旋共振自由基池，在多晶钼衬底上用气体源分子束外延生长了多晶GaN层。GaN/Mo界面具有欧姆特性。多晶GaN表面的原子力显微镜图像揭示了晶粒尺寸为300-600 nm的晶粒结构和晶粒周围的尖端状结构。对多晶GaN/Mo样品进行了场发射测量。在10-8 A/cm 2的发射电流密度下，开启电场低至10.6 V/µm。在低电场和高电场区域，从Fowler-Nordheim图估计的场增强因子分别高达200和610。
Polycrystalline GaN layers were grown on polycrystalline Mo substrates by gas-source molecular-beam epitaxy using an ion-removal electron-cyclotron-resonance radical cell. The GaN/Mo interface exhibited ohmic characteristics. The atomic force microscopy image for the polycrystalline GaN surface revealed the grain structure with a grain size of 300–600 nm and a tip-like structure around the grains. Field emission measurement was carried out for the polycrystalline GaN/Mo samples. The turn-on electric field was as low as 10.6 V/µm at an emission current density of 10-8 A/cm2. Field enhancement factors estimated from the Fowler-Nordheim plot in low and high electric field regions are as large as 200 and 610, respectively.