Electron irradiation-induced defects and photoelectric properties of Te-doped GaSb
Electron irradiation-induced defects and photoelectric properties of Te-doped GaSb
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Te掺杂GaSb的电子辐照缺陷及光电性能
DOI：
10.1016/j.jpcs.2019.04.015
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发表时间：
2019
影响因子：
4
通讯作者：
Guo Qi
中科院分区：
文献类型：
--
作者：
Wang Dengkui;Chen Bingkun;Wei Zhipeng;Fang Xuan;Tang Jilong;Fang Dan;Aierken Abuduwayiti;Wang Xiaohua;Maliya Heini;Guo Qi
电子辐照会引起原子位移损伤并在半导体材料中产生点缺陷。缺陷的形成和变化决定了半导体在辐照过程中的光学性能。本文用1MeV电子辐照Te掺杂GaSb，注量为1×1015电子cm−2，并通过辐照前后的温度依赖性光致发光（PL）研究其光学性质。照射后峰位置发生蓝移且强度明显增强。载流子浓度从4.14×1017增加到7.82×1017cm−3，但迁移率从2690下降到1780cm2V−1s−1。这些现象可以用复杂的缺陷分解机制来解释，即VGaGaSbTeSb缺陷分解为两个独立的VGaGaSbTeSb缺陷。为了验证这一机制，在相同条件下辐照未掺杂的GaSb，PL结果表明电子辐照对未掺杂的GaSb的光学性质影响很小。
Electron irradiation causes atomic displacement damage and produces point defects in semiconductor materials. The formation and variation of defects determine the optical properties of semiconductors during the irradiation process. In this paper, Te-doped GaSb was irradiated by 1 MeV electrons, with fluence of 1 × 1015electrons cm−2, and its optical properties investigated by temperature-dependent photoluminescence (PL) before and after irradiation. After irradiation, the peak position had a blue-shift and intensity was significantly enhanced. The carrier concentration increased from 4.14 × 1017to 7.82 × 1017cm−3but mobility decreased from 2690 to 1780 cm2V−1s−1. These phenomena could be explained by the complex mechanism of defect decomposition, that is, the VGaGaSbTeSbdefect decomposed into two independent VGaGaSband TeSbdefects. To verify this mechanism, undoped GaSb was irradiated under the same conditions and PL results indicated that electron irradiation had little effect on optical properties of undoped GaSb.