Theory of compatible domain arrangements in ferroelectric thin films
Theory of compatible domain arrangements in ferroelectric thin films
复制标题
铁电薄膜相容畴排列理论
DOI：
10.1115/smasis2009-1386
复制
发表时间：
2009
影响因子：
2.5
通讯作者：
J. Huber
中科院分区：
文献类型：
--
作者：
N. Tsou;J. Huber
单晶铁电材料的薄膜受其衬底的约束，处于宏观面内应变的固定状态。通过在平均意义上匹配施加的应变条件，可以形成磁畴结构以最小化系统的总能量。利用电畴兼容理论研究了铁电薄膜的低能平衡态。在具有给定平均应变状态的薄膜中，周期性层状微结构可以利用相容理论进行预测或设计，条件是通过将其简化为二维来阻止磁化壁取向平行于衬底的方向。该理论适用于[001]、[011]和[111]取向的四方铁电材料单晶薄膜。产生兼容的构型，然后探索这种薄膜被电场极化的能力。版权所有©2009，ASME
Thin films of single crystal ferroelectric material are constrained by their substrate to a fixed state of macroscopic in-plane strain. Domain structures can form to minimize the overall energy of the system by matching the imposed strain conditions in an average sense. We study low-energy equilibrium states of ferroelectric thin films using the theory of domain compatibility. In a thin film with a given state of average strain, periodic laminate microstructures can be predicted or designed using compatibility theory and the condition that domain wall orientations parallel to the substrate are prohibited by the reduction to 2-dimensions. The theory is applied to [001] , [011] and [111] oriented single crystal films of tetragonal ferroelectric materials. Compatible configurations are generated and the ability of such films to be poled by electric field is then explored.Copyright © 2009 by ASME