Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon Substrate
Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon Substrate
复制标题
锗衬底上超薄氧化镧薄膜的特性：与硅衬底上的比较
DOI：
10.1143/jjap.46.l376
复制
发表时间：
2007
影响因子：
1.5
通讯作者：
H. Iwai
中科院分区：
文献类型：
--
作者：
Jaeyeol Song;K. Kakushima;P. Ahmet;K. Tsutsui;N. Sugii;T. Hattori;H. Iwai
对在Ge衬底上沉积的La 2 O3超薄薄膜进行了表征。薄膜是通过电子束蒸发沉积在一个可调的真空系统，并进行沉积后退火在不同的温度下，在N2环境。透射电子显微镜和椭圆偏振光谱分析证实，在La 2 O3/Ge界面处几乎没有界面层生长。电性能测试表明，Pt/La 2 O3/Ge结构经600 °C退火后，在1 V电压下的电容等效厚度为1.48 nm，漏电流密度为6 ×10-7 A/cm 2。该结果表明，通过在足够高的温度下退火，可以在Ge衬底上生长La 2 O3薄膜，以激活Ge金属氧化物半导体场效应晶体管的源极和漏极区域。
Ultrathin La2O3 films deposited on Ge substrates were characterized. The films were deposited by electron-beam evaporation in an ultrahigh vacuum system and were subjected to post-deposition annealing at various temperatures in N2 ambient. There was little interfacial layer growth at the interface of La2O3/Ge, which was confirmed by transmission electron microscopy and spectroscopic ellipsometry. Electrical measurements revealed that a small capacitance equivalent thickness of 1.48 nm with a leakage current density of 6 ×10-7 A/cm2 at 1 V was achieved using a Pt/La2O3/Ge structure by post-deposition annealing at 600 °C. This result suggests that ultrathin La2O3 films can be grown on a Ge substrate by annealing at a sufficiently high temperature for activating the source and drain regions for a Ge metal–oxide–semiconductor field-effect transistor.