Inkjet printed CuIn(1-X)GaXSe2 thin film by controlled selenium distribution for improved power conversion efficiency in chalcopyrite solar cells
Inkjet printed CuIn(1-X)GaXSe2 thin film by controlled selenium distribution for improved power conversion efficiency in chalcopyrite solar cells
复制标题
通过控制硒分布喷墨印刷 CuIn(1-X)GaXSe2 薄膜,以提高黄铜矿太阳能电池的功率转换效率
DOI:
10.1016/j.apsadv.2021.100144
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发表时间:
2021
期刊:
影响因子:
--
通讯作者:
S. Dhage
中科院分区:
文献类型:
--
作者:
Brijesh Singh Yadav;S. Dey;S. Dhage
Selenium (Se) vapor pressure is a key factor during the selenization of CuIn1-XGaX(CIG) film to obtain a high-quality CuIn1-XGaXSe2(CIGS) absorber layer. To investigate the effect of Se vapor distribution on the grain growth of inkjet printed precursor film, two geometries of graphite box (square and circular) are used. The results revealed that selenization in the round graphite box give rise to uniform surface coverage and suppressed fine-grained layer due to adequate and uniform distribution of Se vapor. In contrast, film selenized in a square graphite box exhibits high strain and low crystallinity with a thick fine-grained layer. Probable Se vapor distribution inside the graphite box based on internal geometrical constraint and its impact on crystal phase and microstructure is discussed. Finally, CIGS devices fabricated using films selenized in a round graphite box demonstrates higher power-conversion efficiency of 5.2%, owing to high light absorption and efficient carrier separation. Based on J-V and EQE results, probable losses and recombination in the devices are examined and discussed.
影响因子:
2.8
作者:
Jackson, Philip;Hariskos, Dimitrios;Powalla, Michael
通讯作者:
Powalla, Michael