Composition of AlGaAs
Composition of AlGaAs
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AlGaAs的成分
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
A. Springthorpe
中科院分区：
文献类型：
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作者：
Z. Wasilewski;M. Dion;D. J. Lockwood;P. Poole;R. Streater;A. Springthorpe
尽管AlxGa1−xAs合金体系已被广泛研究，但在测量x值时仍存在相当大的不确定性。本文采用分子束外延生长的新的AlxGa1−xAs校准结构来建立明确的合金成分。通过高分辨率x射线衍射，光致发光和拉曼光谱测量这些“标准”AlxGa1−xAs层，以确定测量的物理参数的组成变化。从这些测量中得到的现象学方程现在可以用来确定未知合金的Al含量。此外，结果表明，对于AlxGa1−xAs晶格常数随x的变化，Vegard定律不成立。小二次项对x射线结果的正确分析具有非常重要的意义。
Although the AlxGa1−xAs alloy system has been extensively investigated, there are still considerable uncertainties in measuring the value of x. Here a new AlxGa1−xAs calibration structure, grown by molecular beam epitaxy, has been used to establish unambiguous alloy compositions. Such “standard’’ AlxGa1−xAs layers were measured by high-resolution x-ray diffraction, photoluminescence, and Raman spectroscopy to determine the compositional variations of the measured physical parameters. The phenomenological equations derived from these measurements can now be used to establish the Al content of unknown alloys with confidence. In addition, the results show that Vegard’s law does not hold for the variation of the AlxGa1−xAs lattice constant with x. The small quadratic term has very important implications for a correct analysis of x-ray results.