Optimal Design of Diode-Bridge Bidirectional Solid-State Switch Using Standard Recovery Diodes for 500-kV High-Voltage DC Breaker
Optimal Design of Diode-Bridge Bidirectional Solid-State Switch Using Standard Recovery Diodes for 500-kV High-Voltage DC Breaker
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DOI：
10.1109/tpel.2019.2930739
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发表时间：
2020-02
影响因子：
6.7
通讯作者：
Xiangyu Zhang;Zhanqing Yu;Zhengyu Chen;Biao Zhao;R. Zeng
中科院分区：
文献类型：
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作者：
Xiangyu Zhang;Zhanqing Yu;Zhengyu Chen;Biao Zhao;R. Zeng
目前，通常需要使用快速恢复型二极管来配合全控器件如绝缘栅双极晶体管（IGBT）的快速开关动作。然而，二极管桥双向固态开关（DBSS）的工作条件的特定性质提供了为此目的应用标准恢复二极管的机会，这有助于降低双向开关的成本。这封信介绍了自激振荡现象，这是由二极管的DBSS中的恢复过程所造成的。然后从DBSS的角度分析了不同拓扑结构下二极管的恢复效果，并对缓冲电路和能量吸收电路进行了优化设计。采用标准恢复二极管实现了一台500 kV直流断路器，该断路器可与IGBT可靠配合工作，大大降低了直流断路器的成本。
At present, it is usually necessary to use fast recovery type diodes to cooperate with the fast switching actions of fully controlled devices such as insulated-gate bipolar transistors (IGBTs). However, the specific nature of the working conditions of the diode-bridge bidirectional solid-state switch (DBSS) provides an opportunity to apply standard recovery diodes for this purpose, which helps to reduce the cost of the bidirectional switch. This letter presents the self-oscillation phenomenon that is caused by the recovery processes of the diodes in a DBSS. Then, the recovery effects of these diodes in different topologies are analyzed from the perspective of the DBSS and optimized designs for both the snubber circuit and the energy-absorbing circuit are proposed. A 500-kV dc breaker is realized based on the proposed DBBS using the standard recovery diodes, which can work reliably with IGBTs, and the cost of the resulting dc circuit breakers is greatly reduced.