Effect of Strain in Channel on Electron Transport Properties of Ga1-xInxSb HEMT Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer
Effect of Strain in Channel on Electron Transport Properties of Ga1-xInxSb HEMT Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer
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沟道应变对具有应变 Al0.40In0.60Sb/Al0.25In0.75Sb 阶梯缓冲的 Ga1-xInxSb HEMT 结构电子传输性能的影响
DOI：
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发表时间：
2022
期刊：
影响因子：
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通讯作者：
A. Endoh and H. I. Fujishiro
中科院分区：
文献类型：
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作者：
K. Hatori;N. Kishimoto;M. Hiraoka;Y. Endoh;K. Osawa;T. Hayashi;Y. Kemmochi;R. Machida; I. Watanabe;Y. Yamashita;S. Hara;A. Kasamatsu;A. Endoh and H. I. Fujishiro
