Domain wall contributions to the properties of piezoelectric thin films
Domain wall contributions to the properties of piezoelectric thin films
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DOI：
10.1007/s10832-007-9001-1
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发表时间：
2007-09-01
影响因子：
1.7
通讯作者：
Damjanovic, Dragan
中科院分区：
文献类型：
--
作者：
Bassiri-Gharb, Nazanin;Fujii, Ichiro;Damjanovic, Dragan
在体铁电陶瓷中，与畴壁和相边界的运动相关的非本征贡献是测量的介电和压电响应的重要组成部分。在薄膜中，小的晶粒尺寸、大量的残余应力以及点缺陷和线缺陷的高度集中改变了这些边界的相对迁移率。其结果之一是薄膜通常充当硬压电体。本文回顾了这一领域的文献，强调薄膜的介电和压电性能中观察到的非线性之间的差异。交流场激励水平，直流偏置场，温度和施加的机械应力的影响进行了讨论。
In bulk ferroelectric ceramics, extrinsic contributions associated with motion of domain walls and phase boundaries are a significant component of the measured dielectric and piezoelectric response. In thin films, the small grain sizes, substantial residual stresses, and the high concentration of point and line defects change the relative mobility of these boundaries. One of the consequences of this is that thin films typically act as hard piezoelectrics. This paper reviews the literature in this field, emphasizing the difference between the nonlinearities observed in the dielectric and piezoelectric properties of films. The effect of ac field excitation levels, dc bias fields, temperature, and applied mechanical stress are discussed.