Sputtered Ta-Si-N diffusion barriers in Cu metallizations for Si
Sputtered Ta-Si-N diffusion barriers in Cu metallizations for Si
复制标题
Si 铜金属化中的溅射 Ta-Si-N 扩散势垒
DOI：
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发表时间：
1991
影响因子：
4.9
通讯作者：
M. Nicolet
中科院分区：
文献类型：
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作者：
E. Kolawa;P. Pokela;J. Reid;J. S. Chen;R. Ruiz;M. Nicolet
对具有30 nm TiSi/sub 2/接触层的浅Si n/sup +/-p结二极管的电学测量表明，通过在Ar N/sub 2/等离子体中反应RF溅射Ta/sub 5/Si/sub 3/靶制备的80 nm厚的非晶Ta/sub 36/Si/sub 14/N/sub 50/膜非常有效地防止了Si衬底与TiSi/sub 2/之间的相互作用。接触层和500-nm Cu覆盖层。Ta/sub 36/Si/sub 14/N/sub 50/扩散阻挡层在高达900 ℃的真空中退火30分钟保持I-V特性的完整性。得出的结论是，非晶Ta/sub 36/Si/sub 14/N/sub 50/合金不仅是对铜、钛和硅反应性非常低的材料，而且对铜的扩散率也一定很小。<<ETX>>
Electrical measurements on shallow Si n/sup +/-p junction diodes with a 30-nm TiSi/sub 2/ contacting layer demonstrate that an 80-nm-thick amorphous Ta/sub 36/Si/sub 14/N/sub 50/ film prepared by reactive RF sputtering of a Ta/sub 5/Si/sub 3/ target in an Ar N/sub 2/ plasma very effectively prevents the interaction between the Si substrate with the TiSi/sub 2/ contacting layer and a 500-nm Cu overlayer. The Ta/sub 36/Si/sub 14/N/sub 50/ diffusion barrier maintains the integrity of the I-V characteristics up to 900 C for 30-min annealing in vacuum. It is concluded that the amorphous Ta/sub 36/Si/sub 14/N/sub 50/ alloy is not only a material with a very low reactivity for copper, titanium, and silicon, but must have a small diffusivity for copper as well.<<ETX>>