Constitutive Relations of Indium in Extreme-Temperature Electronic Packaging Based on Anand Model
Constitutive Relations of Indium in Extreme-Temperature Electronic Packaging Based on Anand Model
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DOI：
10.1007/s11664-009-0765-8
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发表时间：
2009-06
影响因子：
2.1
通讯作者：
R. Chang;F. McCluskey
中科院分区：
文献类型：
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作者：
R. Chang;F. McCluskey
纯铟（In）用于低温连接的优势已被公认多年。然而，其低温速率依赖行为的充分表征是缺乏的。在这项工作中，速率和温度相关的本构模型，Anand模型，成功地应用于代表铟在低至−150°C的低温下的非弹性变形行为。用于拟合Anand模型中的材料参数的试验数据是在-150 °C至0°C的不同温度下的等温条件下进行的一系列压缩恒载荷试验中获得的。
The advantage of pure indium (In) for cryogenic joining has been acknowledged for many years. However, full characterization of its low-temperature rate-dependent behavior is lacking. In this work, a rate- and temperature-dependent constitutive model, the Anand model, was successfully applied to represent the inelastic deformation behavior of indium at low temperatures down to −150°C. Test data used for fitting the material parameters in the Anand model was acquired in a series of compression constant-load tests conducted under isothermal conditions at different temperatures ranging from −150°C to 0°C.