Gate-Voltage-Induced Switching of the Spin-Relaxation Rate in a Triple-Quantum-Well Structure
Gate-Voltage-Induced Switching of the Spin-Relaxation Rate in a Triple-Quantum-Well Structure
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DOI：
10.1103/physrevapplied.13.064075
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发表时间：
2020-06
影响因子：
4.6
通讯作者：
Tomonori Iijima;H. Akera
中科院分区：
文献类型：
--
作者：
Tomonori Iijima;H. Akera
从理论上研究了Rashba自旋轨道相互作用（SOI）引起的三量子威尔斯异质结中Dyakonov-Perel自旋弛豫的转变。本自旋弛豫开关的动作是基于栅极电压诱导的电子从具有消失的Rashba SOI的中心阱到具有大Rashba SOI的左阱或右阱的转移。自旋弛豫率的计算是通过扩展Dyakonov-Perel理论的自旋弛豫在一个单一的子带，在一个以上的子带，以考虑电子的贡献，在较高的温度下激发子带。结果表明，通过选择阱层和势垒层的宽度和组分，可以使自旋弛豫速率的开关比达到10 ^{6}$。本发明的自旋弛豫切换被期望改善自旋寿命场效应晶体管中的电流的通断比。
Switching of the Dyakonov-Perel spin relaxation owing to the Rashba spin-orbit interaction (SOI) is theoretically studied in a semiconductor heterostructure with three quantum wells. The action of the present spin-relaxation switching is based on the gate-voltage induced electron transfer from the central well with vanishing Rashba SOI to the left or right well with large Rashba SOI. The spin-relaxation rate is calculated by extending the Dyakonov-Perel theory of the spin relaxation in a single subband to that in more than one subband in order to take into account the contribution from electrons in excited subbands at higher temperatures. It is shown that the on:off ratio of the spin-relaxation rate at room temperature reaches ${10}^{6}$ by choosing widths and compositions of well and barrier layers so as to reduce electron population in excited subbands, which gives an undesirable spin relaxation. The present spin-relaxation switching is expected to improve the on:off ratio of the current in the spin-lifetime field effect transistor.