Evidence for strain in and around InAs quantum dots in GaAs from ion-channeling experiments
Evidence for strain in and around InAs quantum dots in GaAs from ion-channeling experiments
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来自离子通道实验的 GaAs 中 InAs 量子点内部和周围应变的证据
DOI：
10.1103/physrevb.61.8270
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发表时间：
2000
影响因子：
3.7
通讯作者：
P. Koenraad
中科院分区：
文献类型：
--
作者：
L. Selen;L. J. Ijzendoorn;M. Voigt;P. Koenraad
金字塔形 InAs/GaAs 量子点内部和周围的应变 ~QD！通过分子束外延制造会影响受限电荷载流子的状态密度。量子点中应变的存在是解释其光学特性所必需的。本文提出了 MeV 离子通道实验，为 GaAs 中 InAs QD 内部及其周围存在应变提供了证据。 QD 尺寸小，典型高度为 4 nm！润湿层的存在使沟道测量的解释变得复杂，但我们的实验表明，量子点周围的扩展应变场会引起离子转向，从而解释了观察到的沟道行为。
Strain in and around pyramidal InAs/GaAs quantum dots ~QD’s ! fabricated by molecular-beam-epitaxy influences the density of states of the confined charge carriers. The presence of strain in QD’s is required to explain their optical properties. In this paper MeV ion-channeling experiments are presented which provide evidence for the presence of strain in and around InAs QD’s in GaAs. The small dimensions of the QD’s ~typical height 4 nm! and the presence of a wetting layer complicate the interpretation of channeling measurements, but our experiments show that extended strain fields around the QD’s induce ion steering which accounts for the observed channeling behavior.