Superconducting device with transistor-like properties including large current amplification
Superconducting device with transistor-like properties including large current amplification
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DOI：
10.1063/1.127005
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发表时间：
2000-07-17
影响因子：
4
通讯作者：
Booth, NE
中科院分区：
文献类型：
--
作者：
Pepe, GP;Ammendola, G;Booth, NE
我们制作并研究了一种具有晶体管特性的堆叠式超导双隧道结器件。中间电极是由Nb膜和Al膜组成的双层，用作准粒子陷阱。在4.2 K时，观察到大于50的大电流增益时，铝层是正常的。该操作具有很强的方向性。结果解释的基础上捕获的准粒子从超导体到一个正常的金属，连同转换的弛豫能量到电子激发。类似器件在低温测量和检测系统中具有广泛的应用前景。(C)2000年美国物理学会。【S0003-6951（00）03628-7】。
We have fabricated and studied a stacked superconducting double tunnel junction device with transistor-like properties. The intermediate electrode is a bilayer consisting of a Nb film together with an Al film that acts as a quasiparticle trap. Large current gains of more than 50 are observed at 4.2 K when the Al layer is normal. The operation is highly directional. Results are explained on the basis of trapping of quasiparticles from a superconductor into a normal metal, together with a conversion of relaxation energy into electronic excitations. Similar devices should have wide applications in low-temperature measurement and detection systems. (C) 2000 American Institute of Physics. [S0003-6951(00)03628-7].