Wetting-layer transformation for Pb nanocrystals grown on Si(111)
Wetting-layer transformation for Pb nanocrystals grown on Si(111)
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Si(111) 上生长的 Pb 纳米晶的润湿层转变
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
P. Miceli
中科院分区：
文献类型：
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作者：
R. Feng;E. Conrad;M. Tringides;Chinkyo Kim;P. Miceli
我们提出了原位X射线散射实验的结果，研究在Si（111）上的Pb纳米晶岛的生长。它最终表明，铅纳米晶体不驻留在铅润湿层的顶部。成核Pb纳米晶体将岛下方的高度无序的Pb润湿层转变为有序的fcc Pb。然后，该表面由直接在Si表面上的fcc Pb岛组成，其中无序润湿层占据岛之间的区域。由于Pb纳米晶体在更高的覆盖率聚结，我们观察到增加的无序，这与失配应变弛豫是一致的。这些结果对预测稳定Pb岛高度具有重要意义。
We present the results of in situ x-ray scattering experiments that investigate the growth of Pb nanocrystalline islands on Si(111). It is conclusively shown that the Pb nanocrystals do not reside on top of a Pb wetting layer. The nucleating Pb nanocrystals transform the highly disordered Pb wetting layer beneath the islands into well-ordered fcc Pb. The surface then consists of fcc Pb islands directly on top of the Si surface with the disordered wetting layer occupying the region between the islands. As the Pb nanocrystals coalesce at higher coverage we observe increasing disorder that is consistent with misfit strain relaxation. These results have important implications for predicting stable Pb island heights.