Investigations of ZnO Thin Films Grown on c-Al2O3 By Pulsed Laser Deposition in N2 + O2 Ambient
Investigations of ZnO Thin Films Grown on c-Al2O3 By Pulsed Laser Deposition in N2 + O2 Ambient
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N2 O2 环境中脉冲激光沉积在 c-Al2O3 上生长 ZnO 薄膜的研究
DOI：
10.1002/pssc.200779315
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
S. Hassani
中科院分区：
文献类型：
--
作者：
D. Rogers;D. Look;F. Teherani;K. Minder;M. Razeghi;A. Largeteau;G. Demazeau;J. K. Morrod;K. Prior;A. Lusson;S. Hassani
采用脉冲激光沉积法在c-Al2O3表面制备了ZnO薄膜。x射线衍射结果表明，在氮气环境下一步生长的晶体质量和表面形貌较差。通过使用两步生长，在环境中使用N2生长之前，使用名义上未掺杂的ZnO缓冲层，获得了晶体学和表面质量的显着改善。在霍尔测量中，所有薄膜都显示出大多数n型导电。在600℃O2中退火30分钟后，载流子浓度和电导率均有降低。基本的室温载流子浓度为~ 1016 cm-3，与Al从衬底扩散有关。4.2 K光致发光光谱显示出与环境中有N2的生长相关的蓝带。与温度相关的霍尔测量结果与薄膜中加入的N一致。然而，经过处理的器件没有表现出整流行为或电致发光。（©2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim）
ZnO films were deposited on c-Al2O3 using pulsed laser deposition both with and without N2 in the growth ambient. X-ray diffraction revealed poorer crystal quality and surface morphology for one-step growths with N2 in the ambient. A marked improvement in both the crystallographic and surface quality was obtained through use of two-step growths employing nominally undoped ZnO buffer layers prior to growth with N2 in the ambient. All films showed majority n-type conduction in Hall measurements. Post-annealing for 30 minutes at 600 oC in O2 systematically reduced both the carrier concentration and the conductivity. A base room temperature carrier concentration of ∼ 1016 cm–3 was linked to Al diffusing from the substrate. 4.2 K photoluminescence spectra exhibited blue bands associated with the growths having N2 in the ambient. Temperature dependent Hall measurements were consistent with N being incorporated in the films. Processed devices did not, however, show rectifying behaviour or electroluminescence. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)