A new analytic model for amorphous silicon thin‐film transistors
A new analytic model for amorphous silicon thin‐film transistors
复制标题
非晶硅薄膜晶体管的新分析模型
DOI：
10.1063/1.344481
复制
发表时间：
1989
影响因子：
3.2
通讯作者：
J. Shaw
中科院分区：
文献类型：
--
作者：
M. Shur;M. Hack;J. Shaw
我们提出了一种描述非晶硅薄膜晶体管电流电压特性的新理论。我们通过考虑掐断区空间电荷限制电流引起的通道缩短效应来计算饱和时的输出电导。在该模型中，漏极电流通过通道源侧的自由载流子浓度表示。这使得我们可以使用一个方程来准确描述薄膜晶体管的不同工作状态，该方程解释了不同状态下通道中自由载流子浓度的依赖性。我们的模型与实验数据和二维计算机模拟结果都很吻合。这种方法允许人们解释能隙中局域态的不同分布。该模型还被开发成集成电路模拟器，并用于非晶硅集成电路的计算机辅助设计。
We present a new theory describing current‐voltage characteristics of amorphous silicon thin‐film transistors. We calculate the output conductance in saturation by considering channel shortening effects caused by the space‐charge‐limited current in the pinch‐off region. In this model the drain current is expressed through the free‐carrier concentration at the source side of the channel. This allows us to obtain an accurate description of the different operating regimes of a thin‐film transistor using one equation that accounts for the dependence of the free‐carrier concentration in the channel for different regimes. Our model is in good agreement both with experimental data and the results of our two‐dimensional computer simulation. This approach allows one to account for different distributions of localized states in the energy gap. The model has also been developed to be incorporated into a circuit simulator and used for computer‐aided design of amorphous silicon integrated circuits.