Effect of microstructure on Au/sapphire interfacial thermal resistance
Effect of microstructure on Au/sapphire interfacial thermal resistance
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DOI：
10.1063/1.3514563
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发表时间：
2010-11
影响因子：
3.2
通讯作者：
Yibin Xu;R. Kato;M. Goto
中科院分区：
文献类型：
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作者：
Yibin Xu;R. Kato;M. Goto
我们采用溅射法和蒸发法在单晶蓝宝石衬底上沉积Au薄膜。用X射线衍射仪和透射电子显微镜对薄膜的晶体织构、晶粒尺寸和接触面积分数等微结构特征进行了分析。溅射薄膜的平均晶粒尺寸约为200 nm，与衬底结合良好；蒸发态薄膜部分附着在衬底上；晶粒尺寸在10~30 nm之间变化，经退火后增大到50 nm。在退火态样品中观察到Au_2Al相。用频域热反射法测量了界面热阻。溅射Au/蓝宝石界面的热阻为35.5×10−9m2 K W−1，而蒸发样品的热阻高达此值的3倍。界面热阻的变化可以用平行排列的热阻模型中的剥离效应、晶粒度的影响以及界面热阻的影响来解释。
We deposit Au films on single crystal sapphire substrates by sputtering and evaporation methods. The microstructure characteristics such as crystal textures, grain sizes, and fraction of contacted area of the films are examined by x-ray diffraction and transmission electron microscopy. The sputtered films have an average grain size of about 200 nm and perfectly attach to the substrates; the as-evaporated films partially attach to the substrate; the grain size varies from 10 to 30 nm, and after annealing, increases to 50 nm. Au2Al phase is observed in the annealed samples. The interfacial thermal resistance is measured by a frequency domain thermoreflectance method. The thermal resistance of the sputtered Au/sapphire interfaces is 35.5×10−9 m2 K W−1, and those of the evaporated samples are up to three times as large as this value. The change in interfacial thermal resistance is explained by the effect of detachment using a parallel arranged thermal resistance model, the effect of grain size, and the influe...