High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices
High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices
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DOI：
10.1063/1.3514244
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发表时间：
2010-11
影响因子：
4
通讯作者：
P. Manurkar;S. Ramezani-Darvish;B. Nguyen;M. Razeghi;J. Hubbs
中科院分区：
文献类型：
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作者：
P. Manurkar;S. Ramezani-Darvish;B. Nguyen;M. Razeghi;J. Hubbs
使用II型超晶格光电二极管实现了大尺寸1k×1k焦平面阵列（FPA），用于长波长红外探测。 3 英寸 GaSb 衬底上的材料生长在整个晶圆上表现出 11 μm 的 50% 截止波长。 FPA 显示出出色的成像效果。通过 0.13 ms 的积分时间、300 K 背景和 f/4 光学器件，可实现 81 K 时 23.6 mK 和 68 K 时 22.5 mK 的噪声等效温差。我们报告了暗电流密度为 3.3×10−4 A cm−2，零偏压 R0A 的微分电阻面积积在 81 K 时为 166 Ω cm2，在 68 K 时分别为 5.1×10−5 A cm−2 和 1286 Ω cm2。获得的量子效率为 78%。
A large format 1k×1k focal plane array (FPA) is realized using type-II superlattice photodiodes for long wavelength infrared detection. Material growth on a 3 in. GaSb substrate exhibits a 50% cutoff wavelength of 11 μm across the entire wafer. The FPA shows excellent imaging. Noise equivalent temperature differences of 23.6 mK at 81 K and 22.5 mK at 68 K are achieved with an integration time of 0.13 ms, a 300 K background and f/4 optics. We report a dark current density of 3.3×10−4 A cm−2 and differential resistance-area product at zero bias R0A of 166 Ω cm2 at 81 K, and 5.1×10−5 A cm−2 and 1286 Ω cm2, respectively, at 68 K. The quantum efficiency obtained is 78%.