Comparative Study on Chemical Vapor Deposition of Diamond-Like Carbon Films from Methane and Acetylene Using RF Plasma
Comparative Study on Chemical Vapor Deposition of Diamond-Like Carbon Films from Methane and Acetylene Using RF Plasma
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DOI：
10.1143/jjap.45.8398
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发表时间：
2006-10
影响因子：
1.5
通讯作者：
M. Hassan;B. Pramanik;A. Hatta
中科院分区：
文献类型：
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作者：
M. Hassan;B. Pramanik;A. Hatta
采用射频等离子体增强化学气相沉积（RF-PECVD）技术，以甲烷（CH 4）和乙炔（C2 H2）为原料，在13.56MHz的射频功率下制备了类金刚石薄膜（DLC）。利用光学发射光谱（OES）研究等离子体化学。C2 H2等离子体中Hα的强度约为CH 4等离子体中的一半，而在两种情况下，CH自由基的强度相似。沉积膜的电阻率随射频功率的增加而降低，而生长速率随射频功率的增加而增加。在高RF功率下，发现基于CH 4的膜比基于C2 H2的膜更绝缘。在低射频功率下，由CH 4和C2 H2得到的膜的高电阻率。绝缘性能是由于在薄膜中的sp2键的氢化。
Diamond-like carbon films (DLC) were prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) at a frequency of 13.56 MHz using methane (CH4) and acetylene (C2H2) at different RF powers. Optical emission spectroscopy (OES) was carried out to investigate plasma chemistry. The intensity of Hα in the C2H2 plasma was about one-half that in the CH4 plasma, whereas in both cases, the intensities of CH radicals were similar. The resistivity of the deposited films decreased with an increase in RF power, whereas growth rate increased with RF power. CH4-based films were found to be more insulating than C2H2-based films at high RF powers. The high resistivity of the films was obtained from both CH4 and C2H2 at low RF powers. The insulating property was due to the hydrogenation of sp2 bonds in the films.