The electrical properties and distribution of indium in germanium crystals
The electrical properties and distribution of indium in germanium crystals
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DOI：
10.1016/j.mssp.2017.11.004
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发表时间：
2018-02
影响因子：
4.1
通讯作者：
Guojian Wang;H. Mei;Xianghua Meng;D. Mei;Gang Yang
中科院分区：
文献类型：
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作者：
Guojian Wang;H. Mei;Xianghua Meng;D. Mei;Gang Yang
用Czochralski法在氢气气氛中生长掺杂铟的锗晶体。用霍尔效应测量了掺铟锗晶体在77 K下的电学性能。研究了铟在锗晶体中的轴向和径向分布。在铟浓度为3 × 1012~1 × 1019cm−3范围内，锗中铟的有效偏析系数为0.0009。熔体与晶体之间的界面形状决定了铟在锗晶体中的径向分布。
Indium doped germanium crystals were grown in a hydrogen atmosphere using the Czochralski method. The electrical properties of indium doped germanium crystals were measured by Hall effect at 77 K. The axial and radial distributions of indium in the germanium crystals were investigated. The effective segregation coefficient of indium in germanium is determined to be 0.0009 with the concentration of indium from 3 × 1012~1 × 1019cm−3. The interface shape between melt and crystal determined the radial distribution of indium in germanium crystals.