Visibility of dichalcogenide nanolayers
Visibility of dichalcogenide nanolayers
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DOI：
10.1088/0957-4484/22/12/125706
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发表时间：
2011-03-25
期刊：
影响因子：
3.5
通讯作者：
Kis, A.
中科院分区：
文献类型：
--
作者：
Benameur, M. M.;Radisavljevic, B.;Kis, A.
具有共同分子式MX2的二硫属化物是具有从半导体到超导的电性质的层状材料。在这里，我们描述了最佳的成像条件的光学检测的双，二维的二硫属化物纳米晶体含有单，双和三层的二硫化钼，WSe 2和NbSe 2。一个简单的光学模型被用来计算不同厚度的二氧化硅的晶片上沉积的纳米层的对比度。该模型扩展为使用视频摄像机的绿色通道成像。使用原子力显微镜和光学成像，我们确认，单层的二硫化钼和WSe2可以检测到90和270 nm的二氧化硅使用光学手段。通过在宽带绿色照明下测量对比度，我们还能够区分含有单层、双层和三层MoS2和WSe2的纳米结构。我们观察和讨论的情况下，NbSe2的差异。
Dichalcogenides with the common formula MX2 are layered materials with electrical properties that range from semiconducting to superconducting. Here, we describe optimal imaging conditions for the optical detection of ultrathin, two-dimensional dichalcogenide nanocrystals containing single, double and triple layers of MoS2, WSe2 and NbSe2. A simple optical model is used to calculate the contrast for nanolayers deposited on wafers with varying thicknesses of SiO2. The model is extended for imaging using the green channel of a video camera. Using AFM and optical imaging we confirm that single layers of MoS2 and WSe2 can be detected on 90 and 270 nm SiO2 using optical means. By measuring contrast under broadband green illumination we are also able to distinguish between nanostructures containing single, double and triple layers of MoS2 and WSe2. We observe and discuss discrepancies in the case of NbSe2.