Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene)
Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene)
复制标题
立体规则聚（3-己基噻吩）制造的金属-绝缘体-半导体二极管的场效应诱导的红外吸收
DOI：
10.1246/cl.2003.1168
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发表时间：
2003
影响因子：
1.6
通讯作者：
Y. Furukawa
中科院分区：
文献类型：
--
作者：
H. Takao;Y. Furukawa
采用红外反射吸收光谱和傅里叶变换红外差谱相结合的方法，研究了Au/Al 2 O3/聚3-己基噻吩（3-hexylthiophene）结构的金属-绝缘体-半导体二极管的场效应红外吸收。所观察到的频带已被归因于载流子（正极化子）注入到聚合物层，并积累在该层的表面附近。
Infrared absorption induced by field effect from a metal–insulator–semiconductor diode with an Au/aluminum oxide/regioregular poly(3-hexylthiophene) structure has been obtained by using a combination of infrared reflection–absorption spectroscopy and the FT-IR difference-spectrum method. The observed bands have been attributed to carriers (positive polarons) injected into the polymer layer and accumulated near the surface of the layer.