Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors.
Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors.
复制标题
空间电荷对金属-铁电-金属电容器电阻的影响
DOI：
10.1038/srep18297
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发表时间：
2015-12-16
影响因子：
4.6
通讯作者：
Chu JH
中科院分区：
文献类型：
--
作者：
Tian BB;Liu Y;Chen LF;Wang JL;Sun S;Shen H;Sun JL;Yuan GL;Fusil S;Garcia V;Dkhil B;Meng XJ;Chu JH
金属-铁电-金属（MFM）电容器中的电阻（ER）开关由于其在存储器和逻辑器件方面的潜在应用而引起了越来越多的关注。然而，详细的电子机制导致大ER时，极化切换发生在铁电势垒仍然没有很好地理解。在这里，ER效果高达1000%，在室温下，在C-MOS兼容的MFM纳米电容器与8.8 nm厚的聚偏氟乙烯（PVDF）均聚物铁电，这是非常有前途的硅工业集成。最值得注意的是，使用理论开发的金属-半导体整流接触，我们推导出的界面势垒高度的变化，由于空间电荷效应，可以解释所观察到的ER响应的解析表达式。我们扩展了这个空间电荷模型，有关的缺陷释放被困的电荷，铁电氧化物的MFM结构。这个空间电荷模型提供了一个简单而直接的工具来理解最近的不寻常的报告。最后，这项工作表明，缺陷工程可能是一个原始的和有效的路线调整空间电荷效应，从而在未来的电子器件的ER性能。
Resistive switching through electroresistance (ER) effect in metal-ferroelectric-metal (MFM) capacitors has attracted increasing interest due to its potential applications as memories and logic devices. However, the detailed electronic mechanisms resulting in large ER when polarisation switching occurs in the ferroelectric barrier are still not well understood. Here, ER effect up to 1000% at room temperature is demonstrated in C-MOS compatible MFM nanocapacitors with a 8.8 nm-thick poly(vinylidene fluoride) (PVDF) homopolymer ferroelectric, which is very promising for silicon industry integration. Most remarkably, using theory developed for metal-semiconductor rectifying contacts, we derive an analytical expression for the variation of interfacial barrier heights due to space-charge effect that can interpret the observed ER response. We extend this space-charge model, related to the release of trapped charges by defects, to MFM structures made of ferroelectric oxides. This space-charge model provides a simple and straightforward tool to understand recent unusual reports. Finally, this work suggests that defect-engineering could be an original and efficient route for tuning the space-charge effect and thus the ER performances in future electronic devices.