Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap
Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap
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DOI：
10.1109/led.2009.2034670
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发表时间：
2010-01-01
影响因子：
4.9
通讯作者：
Lien, C.
中科院分区：
文献类型：
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作者：
Lee, H. Y.;Chen, Y. S.;Lien, C.
含有薄的反应性Ti缓冲层的基于氧化铪（HfOx）的电阻式存储器的存储器性能可以被极大地改善。由于Ti在后金属退火之后从HfOx膜吸收氧原子的优异能力，在TiN/Ti/HfOx/TiN堆叠层的HfOx层中留下了大量的氧空位。这些氧空位对于制造具有稳定的双极阻变行为的存储器件是至关重要的。除了低工作功率和大开/关比（> 100）的优点外，该存储器还具有可靠的开关耐久性（> 10（6）个周期）、稳定的电阻状态（200摄氏度）、高器件成品率（接近100%）和快速开关速度（< 10 ns）。
The memory performance of hafnium oxide (HfOx)-based resistive memory containing a thin reactive Ti buffer layer can be greatly improved. Due to the excellent ability of Ti to absorb oxygen atoms from the HfOx film after post-metal annealing, a large amount of oxygen vacancies are left in the HfOx layer of the TiN/Ti/HfOx/TiN stacked layer. These oxygen vacancies are crucial to make a memory device with a stable bipolar resistive switching behavior. Aside from the benefits of low operation power and large on/off ratio (> 100), this memory also exhibits reliable switching endurance (> 10(6) cycles), robust resistance states (200 degrees C), high device yield (similar to 100%), and fast switching speed (< 10 ns).