Scanning tunneling microscopy study of the adsorption and recombinative desorption of hydrogen from the Si(100)‐2×1 surface
Scanning tunneling microscopy study of the adsorption and recombinative desorption of hydrogen from the Si(100)‐2×1 surface
复制标题
Si(100)-2×1表面氢吸附与复合解吸的扫描隧道显微镜研究
DOI：
10.1116/1.577984
复制
发表时间：
1992
期刊：
影响因子：
--
通讯作者：
J. Boland
中科院分区：
文献类型：
--
作者：
J. Boland
用扫描隧道显微镜和光谱研究了氢在Si(100)-2×1表面上的吸附和复合脱附。最初在室温下，氢原子单独占据硅二聚体单元，导致孤立的Si-H键和不成对的悬挂键的形成。在较高的温度下(∼630K)，这些氢原子倾向于在二聚体单元上配对。因此，热力学上倾向于氢原子成对占据二聚体。这种配对现象是由于Si(10 0)-2×1表面上的悬挂键之间的π相互作用，有利于配对二聚体单元上未配对的悬挂键。这种悬挂键的配对反过来迫使氢原子配对。从饱和表面脱附后，在硅二聚体单元上发现了成对的悬挂键，这表明脱附涉及单氢化物表面二聚体单元中氢原子的直接复合。这场灾难的影响..。
A scanning tunneling microscopy and spectroscopy study of the adsorption and recombinative desorption of hydrogen from the Si(100)‐2×1 surface is presented. Initially at room temperature, hydrogen atoms singly occupy the Si dimer units resulting in the formation of isolated Si–H bonds and unpaired dangling bonds. At higher temperatures (∼630 K) these hydrogen atoms tend to pair up on the dimer units. Thus there is a thermodynamic preference for the hydrogen atoms to occupy the dimers in pairs. This pairing phenomenon is due to a π interaction between the dangling bonds on the Si(100)‐2×1 surface which favors pairing the unpaired dangling bonds on the dimer units. This pairing of dangling bonds in turn forces the hydrogen atoms to pair. Following desorption from the saturated surface, pairs of dangling bonds are found localized on the Si dimer units, suggesting that desorption involves the direct recombination of hydrogen atoms from the dimers units of the monohydride surface. The implications of this deso...