Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation
Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation
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DOI：
10.1143/jjap.51.03ca01
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发表时间：
2012-03
影响因子：
1.5
通讯作者：
T. Nishida;Kazushi Fuse;M. Furuta;Y. Ishikawa;Y. Uraoka
中科院分区：
文献类型：
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作者：
T. Nishida;Kazushi Fuse;M. Furuta;Y. Ishikawa;Y. Uraoka
研究了金属诱导横向结晶（MILC）法制备生物矿化镍纳米点多晶硅薄膜。评价了非晶硅前驱体膜的结晶度与沉积方法的关系，如等离子体增强化学气相沉积（PECVD）、溅射沉积或电子束蒸发。讨论了厚膜的制备及其结晶过程。CVD制备的多晶硅薄膜具有较大的残余应力（1.4 GPa）。相比之下，溅射膜的应力非常低，并且与衬底具有牢固的粘附性。因此，可以很容易地通过溅射制备厚度超过1 μ m的Si薄膜；然而，薄膜中的晶体尺寸非常小，因为溅射薄膜中高密度的杂质阻碍了结晶。因此，本文尝试用CVD法制备具有粘附层的多晶硅薄膜。厚度大于100 nm且无粘附层的Si薄膜从衬底上脱落。采用CVD法制备了厚度为270 nm、晶粒尺寸大于20µm的聚硅薄膜，得到的CVD薄膜中碳、镍等杂质的浓度很低。
The fabrication of polycrystalline silicon (poly-Si) films by metal-induced lateral crystallization (MILC) using biomineralized Ni nanodots was investigated. The dependence of film crystallinity on the deposition method for the amorphous Si precursor films, such as plasma-enhanced chemical vapor deposition (PECVD), sputtering deposition, or electron beam evaporation, was evaluated. The preparation of thick films and their crystallization are discussed. The poly-Si film obtained by CVD had a large residual stress (1.4 GPa). In contrast, the stress of the sputtered film was very low and had firm adherence to the substrate. Thus, Si films over 1 µm thick can be easily prepared by sputtering; however, the crystallite size in the films is very small because crystallization is prevented by a high-density of impurities in the sputtered films. Therefore, the preparation of poly-Si films with adhesion layers was attempted by CVD. Si films thicker than 100 nm without an adhesion layer were exfoliated from the substrates. Poly-Si films of 270 nm thick with large crystallite sizes above 20 µm were prepared with an adhesion layer using the CVD method, and the concentrations of impurities, such as carbon and Ni, in the obtained CVD film were very low.