Stress evolution during and after sputter deposition of Cu thin films onto Si (100) substrates under various sputtering pressures
Stress evolution during and after sputter deposition of Cu thin films onto Si (100) substrates under various sputtering pressures
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在不同溅射压力下将 Cu 薄膜溅射沉积到 Si (100) 衬底上期间和之后的应力演变
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
R. Kaltofen
中科院分区：
文献类型：
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作者：
M. Pletea;W. Brückner;H. Wendrock;R. Kaltofen
研究了在不同溅射压力（0.05 ~ 6 Pa）下，以0.1nm / s的恒定速率在Si（100）衬底上沉积厚度分别为20 nm和300 nm的Cu薄膜的应力演变过程。应力是通过使用光学双光束偏转法在原位测量晶圆曲率来确定的。为了将应力演化与微观结构发展联系起来，采用扫描电子显微镜、原子力显微镜和电子背散射衍射对微观结构进行了研究。结果表明，在沉积的不同阶段，随着溅射压力的减小，拉伸应力向压应力转变。沉积初期的应力演化特征可归结为Volmer-Weber机制。对于较厚的薄膜，溅射压力对应力演化的影响可以区分为三个区域。从压缩到拉伸的转变…
The stress evolution during and after dc magnetron sputter deposition of Cu thin films with thicknesses of 20 and 300 nm and deposited with a constant rate of 0.1nm∕s onto Si (100) substrates is studied for various sputtering pressures (0.05–6 Pa). The stress was determined by means of in situ wafer curvature measurements using an optical two-beam deflection method. To correlate the stress evolution with the microstructure development, microstructure investigations were performed by scanning electron microscopy, atomic force microscopy, and electron backscatter diffraction. The results show the transition from tensile to compressive stress with decreasing sputtering pressure at different stages of the deposition. The features of the stress evolution during the early stage of deposition can be ascribed to the Volmer–Weber mechanism. For thicker films, three regions of the sputtering pressure can be distinguished concerning their effect on the stress evolution. The transition from compressive to tensile str...