Interlayer dielectric process for LSI circuits using positive photosensitive polyimide synthesized by block-copolymerization
Interlayer dielectric process for LSI circuits using positive photosensitive polyimide synthesized by block-copolymerization
复制标题
使用嵌段共聚合成的正性光敏聚酰亚胺的LSI电路层间介电工艺
DOI：
10.1117/12.436832
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
S. Matsumoto
中科院分区：
文献类型：
--
作者：
M. Aoyagi;S. Segawa;E. Jung;T. Itatani;M. Komuro;T. Sakamoto;H. Itatani;M. Miyamura;S. Matsumoto
光敏聚酰亚胺有望成为未来大规模集成电路的层间介电材料。本文提出了一种由芳二酐和脂肪二胺通过嵌段共聚直接合成正光敏聚酰亚胺的层间介电新工艺。以n -甲基-2-吡咯烷酮（NMP）为溶剂制备光敏聚酰亚胺溶液。以重氮萘醌PC-5为光敏剂。通过改变聚酰亚胺浓度和旋转速度，对薄膜进行自旋涂覆。在3英寸硅片上，涂层均匀性低于+/- 0.9%。用i-line光刻得到了0.5微米的线和空间图案。对比的（gamma）值评估为1.05。用腔微扰法测定了基聚酰亚胺在厚膜上的介电常数。2.4 ~ 3.0是在1ghz ~ 20ghz的频率范围内得到的。经高温热处理，测得击穿电压为107 kV/mm。
Photosensitive polyimide is expected as a future interlayer dielectric material in LSI circuits. In this paper, we propose a new interlayer dielectric process using a positive photosensitive polyimide directly synthesized from aromatic dianhydride and aliphatic diamine by block-copolymerization. Photosensitive polyimide solution was prepared with N-methyl-2-pyrrolidone (NMP) solvent. A diazonaphthoquinone PC-5 was used as a photosensitizer. The thin film was spin-coated with changing polyimide concentration and rotation speed. The uniformity of the coated film was achieved less than +/- 0.9 % on a 3-inch wafer of silicon. A 0.5 micrometers line and space pattern was obtained by i-line lithography. The (gamma) value of the contrast was evaluated to 1.05. The dielectric constant of the base polyimide was measured for a thick film by the cavity perturbation method. The values from 2.4 to 3.0 were obtained within the frequency range from 1 GHz to 20 GHz. The break down voltage was measured to be 107 kV/mm without high-temperature heat treatment.