Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells
Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells
复制标题
室温晶圆键合 GaInP/GaAs/InGaAsP 三结太阳能电池的研究
DOI：
10.1016/j.apsusc.2016.07.163
复制
发表时间：
2016
影响因子：
6.7
通讯作者：
Hui Yang
中科院分区：
文献类型：
--
作者：
Wenxian Yang;Pan Dai;Lian Ji;Ming Tan;Yuanyuan Wu;Shiro Uchida;Shulong Lu;Hui Yang
我们报告的III-V族化合物半导体多结太阳能电池的制造使用室温晶圆键合技术。采用全固态分子束外延（MBE）技术分别在GaAs衬底上生长了GaInP/GaAs双结太阳电池和在InP衬底上生长了InGaAsP单结太阳电池。然后在室温下将两个电池结合到三结太阳能电池。在AM1.5G太阳模拟器上，获得了30.3%的GaInP/GaAs/InGaAsP圆片键合太阳电池转换效率。结果表明，室温键合技术和分子束外延技术在提高多结太阳电池性能方面具有很大的潜力。
We report on the fabrication of III–V compound semiconductor multi-junction solar cells using the room-temperature wafer bonding technique. GaInP/GaAs dual-junction solar cells on GaAs substrate and InGaAsP single junction solar cell on InP substrate were separately grown by all-solid state molecular beam epitaxy (MBE). The two cells were then bonded to a triple-junction solar cell at room-temperature. A conversion efficiency of 30.3% of GaInP/GaAs/InGaAsP wafer-bonded solar cell was obtained at 1-sun condition under the AM1.5G solar simulator. The result suggests that the room-temperature wafer bonding technique and MBE technique have a great potential to improve the performance of multi-junction solar cell.