Assignment of the Raman active vibration modes of β-Si3N4 using micro-Raman scattering
Assignment of the Raman active vibration modes of β-Si3N4 using micro-Raman scattering
复制标题
使用微拉曼散射分配 β-Si3N4 的拉曼主动振动模式
DOI：
10.1063/1.369366
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发表时间：
1999
影响因子：
3.2
通讯作者：
S. Tanaka
中科院分区：
文献类型：
--
作者：
K. Honda;Shino Yokoyama;S. Tanaka
用显微拉曼光谱测量了β-Si3N4拉曼活性带在110-1100 cm−1波数范围内的振动模，确定了这些拉曼活性带的拉曼强度与晶体取向的关系。激光聚焦在烧结板上呈规则六角形或拉长六角形的单一颗粒上。在185、208和230 cm−1处出现的三个强吸收带分别属于E2g、Ag和E1g的振动模。剩余的峰也被分配给不可约表示。
The vibrational modes of the β-Si3N4 Raman active bands appearing in the wave number region between 110 and 1100 cm−1 were determined by the polarization and the crystallographic orientation dependence of the Raman intensities of the bands using micro-Raman spectroscopy. The laser beam was focused onto a single grain with the shape of a regular hexagon or elongated hexagon on the sintered ceramic plate. The three intense bands appearing at about 185, 208, and 230 cm−1 were attributed to the vibrational modes of E2g, Ag, and E1g, respectively. The remaining peaks were also assigned to the irreducible representations.