Initial adsorption and C-incorporation of organosilanes at Si(0 0 1) investigated by temperature-programmed desorption
Initial adsorption and C-incorporation of organosilanes at Si(0 0 1) investigated by temperature-programmed desorption
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通过程序升温解吸研究有机硅烷在 Si(0 0 1) 处的初始吸附和 C 掺入
DOI：
10.1016/j.apsusc.2004.08.020
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发表时间：
2005
影响因子：
6.7
通讯作者：
M. Suemitsu
中科院分区：
文献类型：
--
作者：
K. Senthil;M. Suemitsu
用程序升温脱附(TPD)法研究了有机硅烷[单甲基硅烷(MMS)、二甲基硅烷(DMS)和三甲基硅烷(TMS)]在Si(001)表面的初始吸附和C-结合。在有机硅烷的TPD光谱中，氢是唯一观察到的脱附物种。有机硅烷分子在室温下以解离方式吸附在Si(001)表面。从DMS和TMS吸附的硅表面的TPD谱显示了初始吸附的与碳相关的氢(H2)脱附峰。有机硅烷分子的碳掺入比由大到小的顺序是TMS>；DMS>；MMS，三种有机硅烷分子的粘连几率几乎相同。
Temperature-programmed desorption (TPD) has been used to study the initial adsorption and C-incorporation of organosilanes [monomethylsilane (MMS), dimethylsilane (DMS) and trimethylsilane (TMS)] at Si(001) surfaces. Hydrogen was the only desorbing species observed in the TPD spectra from organosilanes. Organosilane molecules adsorb dissociatively on the Si(001) surfaces at room temperature. TPD spectra from DMS- and TMS-adsorbed Si surfaces present carbon-related hydrogen (H2) desorption peaks from the initial adsorption. The carbon-incorporation ratio was found to be larger in the order of TMS > DMS > MMS, with the sticking probability of molecules being almost identical for the three organosilane molecules.