GaN-based nitride semiconductor films deposited on nitrified HfO2/Si substrate by molecular beam epitaxy
GaN-based nitride semiconductor films deposited on nitrified HfO2/Si substrate by molecular beam epitaxy
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DOI：
10.1016/j.jcrysgro.2009.01.133
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发表时间：
2009-05
影响因子：
1.8
通讯作者：
F. Hu;H. Sameshima;M. Wakui;R. Ito;K. Hane
中科院分区：
文献类型：
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作者：
F. Hu;H. Sameshima;M. Wakui;R. Ito;K. Hane
