Oxide-mediated nitrogen doping of CVD graphene and their subsequent thermal stability
Oxide-mediated nitrogen doping of CVD graphene and their subsequent thermal stability
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DOI：
10.1088/1361-6528/acedb5
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发表时间：
2023-08
期刊：
影响因子：
3.5
通讯作者：
Khadisha M Zahra;Conor Byrne;Zheshen Li;Kerry Hazeldine;A. Walton
中科院分区：
文献类型：
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作者：
Khadisha M Zahra;Conor Byrne;Zheshen Li;Kerry Hazeldine;A. Walton
石墨烯的杂原子掺杂是一种调整其化学和电子特性的有前途的方法，这是传感、催化和能量存储等许多应用的先决条件。在生长过程中用氮掺杂化学气相沉积 (CVD) 石墨烯（原位掺杂）是一种常见策略，但它会产生不相等的掺杂位点分布，并且需要对 CVD 生长过程进行大量修改。在这项研究中，我们展示了一种新颖且简单的氧化物介导方法，将氮掺杂剂引入到预先存在的 CVD 石墨烯中（非原位掺杂），该方法实现了与原位掺杂方法相当的掺杂密度。此外，我们证明氮掺杂石墨烯的热退火可以选择性地去除吡啶，保留石墨和吡咯氮掺杂剂，为进一步改性石墨烯功能提供了一条有吸引力的途径。我们提出的方法简单且可扩展，可以精确定制石墨烯特性，而无需改变 CVD 生长方案。
Heteroatom doping of graphene is a promising approach for tailoring its chemical and electronic properties—a prerequisite for many applications such as sensing, catalysis, and energy storage. Doping chemical vapour deposition (CVD) graphene with nitrogen during growth (in situ doping) is a common strategy, but it produces a distribution of inequivalent dopant sites and requires substantial modifications to the CVD growth process. In this study, we demonstrate a novel and simple oxide-mediated approach to introduce nitrogen dopants into pre-existing CVD graphene (ex situ doping) which achieves comparable doping densities to in situ doping methodologies. Furthermore, we demonstrate that thermal annealing of N-doped graphene can selectively remove pyridinic, retaining graphitic and pyrrolic nitrogen dopants, offering an attractive route to further modify graphene functionality. The methodologies we present are simple and scalable to precisely tailor graphene properties without the need to alter CVD growth protocols.