Time-resolved photoluminescence studies of free and donor-bound exciton in GaN grown by hydride vapor phase epitaxy
Time-resolved photoluminescence studies of free and donor-bound exciton in GaN grown by hydride vapor phase epitaxy
复制标题
氢化物气相外延生长的 GaN 中自由和施主束缚激子的时间分辨光致发光研究
DOI：
10.1063/1.124530
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发表时间：
1999
影响因子：
4
通讯作者：
R. Molnar
中科院分区：
文献类型：
--
作者：
G. Bunea;W. Herzog;M. Unlu;B. Goldberg;R. Molnar
利用时间分辨光致发光（PL）光谱研究了氢化物气相外延生长的非故意掺杂GaN中自由激子和供体结合激子的辐射复合。低温（4 K）、时间积分PL光谱鉴定出自由激子(A)，供体结合激子峰在~ 6 meV以下，受体结合激子峰在~ 20 meV以下。在4 K时，自由激子的辐射复合寿命为295 ps，供体束缚激子的辐射复合寿命为530 ps。在室温下，自由激子的衰变保持单指数，寿命增加到530 ps，与激子态的热激发一致。
Time-resolved photoluminescence (PL) spectroscopy was used to study the radiative recombination of free and donor-bound excitons in unintentionally doped GaN grown by hydride vapor phase epitaxy. Low temperature (4 K), time-integrated PL spectra identified the free exciton (A), the donor-bound exciton peak ∼6 meV below, and the acceptor-bound exciton ∼20 meV below the free exciton peak. A radiative recombination lifetime of 295 ps for the free exciton and 530 ps for donor-bound exciton were found at 4 K. The decay of the free exciton remained single exponential to room temperature, with an increase in lifetime to 530 ps, consistent with the thermal excitation of exciton states.