Separating interface magnetoresistance from bulk magnetoresistance in silicon-based Schottky heterojunctions device
Separating interface magnetoresistance from bulk magnetoresistance in silicon-based Schottky heterojunctions device
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DOI：
10.1063/1.5097736
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发表时间：
2019-06
影响因子：
3.2
通讯作者：
Xiong He;Bin He;Hanxing Yu;Zhigang Sun;Jun He;Wenyu Zhao
中科院分区：
文献类型：
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作者：
Xiong He;Bin He;Hanxing Yu;Zhigang Sun;Jun He;Wenyu Zhao
基于非磁性半导体的磁阻（MR）器件结合了高性能和低成本，引起了广泛的关注。然而，在肖特基异质结组成的器件中将界面磁阻与体磁阻分离一直是一个巨大的挑战。本文研究了硅基肖特基异质结器件的磁流变效应，并通过结合二探针和四探针方法将界面磁流变效应与体磁流变效应分离，研究了其机理。我们发现，在150 K到300 K的温度范围内，体MR值明显小于雪崩击穿区域的总MR值，这表明总MR效应主要源自界面MR效应。理论分析表明，由于载流子上洛伦兹力的存在，体磁流变效应是一种正常现象，而界面磁流变效应与施加磁场对局部等离子体的抑制有关，其中局部等离子体是由于Ag/SiO2/p-Si肖特基异质结中的雪崩击穿而形成的。通过减小电极之间的距离可以进一步增强室温下的总磁阻效应，在1 T磁场下总磁阻达到约1847%，在0.1 T磁场下磁阻灵敏度高达118.5 T−1。基于非磁性半导体的高性能和低成本的磁阻（MR）器件引起了广泛的关注。然而，在肖特基异质结组成的器件中将界面磁阻与体磁阻分离一直是一个巨大的挑战。本文研究了硅基肖特基异质结器件的磁流变效应，并通过结合二探针和四探针方法将界面磁流变效应与体磁流变效应分离，研究了其机理。我们发现，在150 K到300 K的温度范围内，体MR值明显小于雪崩击穿区域的总MR值，这表明总MR效应主要源自界面MR效应。理论分析表明，由于载流子上洛伦兹力的存在，体磁流变效应是一种正常的磁流变效应，而界面磁流变效应与施加磁场对局域等离子体的抑制有关，其中局域等离子体...
Nonmagnetic semiconductor based magnetoresistance (MR) devices combining high performance and low cost have attracted a lot of attention. However, it has been a great challenge to separate the interface MR from the bulk MR in the devices composed of Schottky heterojunctions. In this paper, the MR effect of a silicon-based Schottky heterojunction device had been studied, and its mechanisms were investigated by separating the interface MR effects from the bulk MR effects through combining two-probe and four-probe methods. We find that the bulk MR value is significantly smaller than the total MR value in the avalanche breakdown region in the temperature range of 150 K to 300 K, indicating that the total MR effect mainly originates from the interface MR effect. Theoretical analysis shows that the bulk MR effect is a normal one due to the existence of the Lorentz force on the carriers, and the interface MR effect relates to the suppression of the local plasmas by applying magnetic fields, where the local plasmas form due to the avalanche breakdown in the Ag/SiO2/p-Si Schottky heterojunctions. The total MR effect at room temperature can be further enhanced by reducing the distance between electrodes, and the total MR reaches about 1847% under a magnetic field of 1 T and the MR sensitivity is as large as 118.5 T−1 under 0.1 T.Nonmagnetic semiconductor based magnetoresistance (MR) devices combining high performance and low cost have attracted a lot of attention. However, it has been a great challenge to separate the interface MR from the bulk MR in the devices composed of Schottky heterojunctions. In this paper, the MR effect of a silicon-based Schottky heterojunction device had been studied, and its mechanisms were investigated by separating the interface MR effects from the bulk MR effects through combining two-probe and four-probe methods. We find that the bulk MR value is significantly smaller than the total MR value in the avalanche breakdown region in the temperature range of 150 K to 300 K, indicating that the total MR effect mainly originates from the interface MR effect. Theoretical analysis shows that the bulk MR effect is a normal one due to the existence of the Lorentz force on the carriers, and the interface MR effect relates to the suppression of the local plasmas by applying magnetic fields, where the local plasm...