Dense Arrays of Highly Aligned Graphene Nanoribbons Produced by Substrate‐Controlled Metal‐Assisted Etching of Graphene
Dense Arrays of Highly Aligned Graphene Nanoribbons Produced by Substrate‐Controlled Metal‐Assisted Etching of Graphene
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DOI：
10.1002/adma.201302619
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发表时间：
2013-12
影响因子：
29.4
通讯作者：
P. Solís-Fernández;Kazuma Yoshida;Yui Ogawa;M. Tsuji;H. Ago
中科院分区：
文献类型：
--
作者：
P. Solís-Fernández;Kazuma Yoshida;Yui Ogawa;M. Tsuji;H. Ago
通过衬底控制刻蚀大面积单层石墨烯制备了密集的定向石墨烯纳米带(GNR)阵列。适当选择刻蚀衬底和催化剂沉积方法，可以获得密度高达25纳米带的μm(-1)，平均宽度为19 nm。用这些GNR制造的背栅晶体管的高通断比证明了该方法的有效性，该比可高达5000。
Dense arrays of aligned graphene nanoribbons (GNRs) are fabricated by substrate-controlled etching of large-area single-layer graphene. An adequate choice of etching substrate and catalyst deposition method allows densities up to 25 nanoribbons μm(-1) to be obtained with average widths of 19 nm. The efficacy of the method is evidenced by the high on/off ratios of back-gated transistors made with these GNRs, which can go up to 5000.