Improved performance of long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1−xN buffer layers
Improved performance of long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1−xN buffer layers
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在应力松弛的 InxGa1−xN 缓冲层上使用宽量子阱生长的长波长发光二极管的性能得到改善
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
S. Denbaars
中科院分区：
文献类型：
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作者：
I. Koslow;Claire McTaggart;Feng Wu;S. Nakamura;J. Speck;S. Denbaars
长波长（>540 nm）单量子阱发光二极管是在应力弛豫的InxGa1−xN缓冲层上赝晶生长的。基面位错滑移导致在InxGa 1 −xN缓冲层底部形成失配位错。这提供了一维塑性松弛的膜内部，包括活性区。对于更宽的量子威尔斯（>3.5 nm），与没有弛豫生长的参考器件相比，在弛豫缓冲层上生长的器件的效率显示出显著的改善，这表明可以通过基面滑移利用部分弛豫来防止较厚有源区的退化。
Long-wavelength (>540 nm) single-quantum-well light-emitting diodes were grown pseudomorphically on stress-relaxed InxGa1−xN buffer layers on the orientation. Basal plane dislocation glide led to the formation of misfit dislocations at the bottom of the InxGa1−xN buffer layer. This provided one-dimensional plastic relaxation in the film interior, including the active region. For wider quantum wells (>3.5 nm), the efficiency of devices grown on relaxed buffer layers showed significant improvement compared to reference devices grown with no relaxation, indicating that degradation of thicker active regions can be prevented with partial relaxation via basal plane slip.