Defect evolution and impurity migration in Na implanted ZnO
Defect evolution and impurity migration in Na implanted ZnO
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DOI：
10.1103/physrevb.84.205202
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发表时间：
2011-11
影响因子：
3.7
通讯作者：
P. Neuvonen;L. Vines;V. Venkatachalapathy;A. Zubiaga;F. Tuomisto;A. Hallén;B. Svensson;A. Kuznetsov
中科院分区：
文献类型：
--
作者：
P. Neuvonen;L. Vines;V. Venkatachalapathy;A. Zubiaga;F. Tuomisto;A. Hallén;B. Svensson;A. Kuznetsov
用二次离子质谱仪(SIMS)和正电子湮没谱(PAS)研究了Na(+)注入水热生长的氧化锌样品中杂质的迁移和空穴缺陷的演化。与大多数其他元素不同，Na的存在往往会降低退火后的开孔体积缺陷的浓度，并且在600℃以上，Na表现出与Li浓度相关的陷阱限制扩散。Na原子迁移的主要陷阱很可能是存在于锌位上的Li，但对数据的系统分析表明，锌空位在捕获过程中也起着重要作用。
Secondary ion mass spectrometry (SIMS) and positron annihilation spectroscopy (PAS) have been applied to study impurity migration and open volume defect evolution in Na(+) implanted hydrothermally grown ZnO samples. In contrast to most other elements, the presence of Na tends to decrease the concentration of open volume defects upon annealing and for temperatures above 600 degrees C, Na exhibits trap-limited diffusion correlating with the concentration of Li. A dominating trap for the migrating Na atoms is most likely Li residing on Zn site, but a systematic analysis of the data suggests that zinc vacancies also play an important role in the trapping process.